AN UNBIASED VIEW OF N TYPE GE

An Unbiased View of N type Ge

s is that on the substrate material. The lattice mismatch contributes to a significant buildup of pressure energy in Ge levels epitaxially grown on Si. This strain Electricity is mostly relieved by two mechanisms: (i) era of lattice dislocations within the interface (misfit dislocations) and (ii) elastic deformation of both the substrate along with

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